PART |
Description |
Maker |
IRF1010E IRF1010EPBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A 功率MOSFET(减振钢板基本\u003d 60V的,的Rds(on)\u003d 12mohm,身份证\u003d 84A条? Power MOSFET(Vdss=60V/Rds(on)=12mohm/Id=84A
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International Rectifier, Corp.
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IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR |
-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A) Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)
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IRF[International Rectifier]
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IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR |
Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET(减振钢板基本\u003d- 60V的,的Rds(on)\u003d 0.50ohm,身份证\u003d- 6.7A Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A) HEXFET? Power MOSFET -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
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International Rectifier, Corp. IRF[International Rectifier]
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IRF054SMD |
N-Channel Power MOSFET(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)(N沟道功率MOS场效应管(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)) N沟道功率MOSFET(减振钢板基本:60V的,身份证(续)5A条,的Rds(on):0.027Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本0V的,身份证(续)5A条,的Rds(on.027Ω))
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SemeLAB Seme LAB International Rectifier http://
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IRFZ48V IRFZ48VPBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=72A)
|
IRF[International Rectifier]
|
RJF0618JPE |
60V-40A Silicon N Channel Thermal FET Power Switching
|
Renesas Electronics Corporation
|
IRF7478 |
Power MOSFET(Vdss=60V)
|
IRF[International Rectifier]
|
TPCA8053-H |
Power MOSFET (N-ch single 30V<VDSS≤60V)
|
TOSHIBA
|
TPC6006-H |
Power MOSFET (N-ch single 30V<VDSS≤60V)
|
TOSHIBA
|
TK70X04K3Z |
Power MOSFET (N-ch single 30V<VDSS≤60V)
|
TOSHIBA
|
TK150F04K3 |
Power MOSFET (N-ch single 30V<VDSS≤60V)
|
TOSHIBA
|